| Type of Laser Treatment | Semiconductor Diode Laser |
| Wavelength | 810 nm |
| Power | 2.700 mW |
| Pulse duration | 100ms (min) to 9s (max) |
| Repetition interval duration | 0 to 1.5s |
| FastPulse duration | 180 - 330us |
| FastPulse period | 1.800 - 2.200 us |
| Type of aim laser | Semiconductor Diode Laser |
| Wavelength | 650 nm |
| Power | 0.05nW 0.8mW (continuosly adjustable) |
| Weight | 6.5 kg |
| Dimensions (H / W / D) | 110 / 320 / 310 mm |
| External refrigeration | Not necessary |
| Power Supply - voltage | 90-240V~, 50/60Hz |
| Consumption | 150VA (maximum) |
| Maximum Power | FTC 2500 - 2.700 mW and FTC 2000 - 2.000 mW |
| Optional Accessories: |
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